Formation of γ-Ga<sub>2</sub>O<sub>3</sub> by ion implantation: Polymorphic phase transformation of β-Ga<sub>2</sub>O<sub>3</sub>
نویسندگان
چکیده
Ion implantation induced phase transformation and the crystal structure of a series ion implanted β-Ga 2 O 3 samples were studied using electron diffraction, high resolution transmission microscopy, scanning microscopy. In contrast to previous reports suggesting an orthorhombic κ-phase, we show that for 28 Si + , 58 Ni stoichiometric 69 Ga / 16 -implantations, monoclinic β-phase transforms cubic γ-phase. The γ-phase was confirmed implantations over range fluences from 10 14 ions/cm indicating is general phenomenon due strain accumulation and/or γ-Ga being energetically preferred highly defective .
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2022
ISSN: ['1520-8842', '0003-6951', '1077-3118']
DOI: https://doi.org/10.1063/5.0120103